| 摘要 |
Methods and apparatus for non-volatile memory cells. A memory cell includes a floating gate formed over a substrate with a tunneling dielectric over an upper surface of the floating gate and an erase gate over the tunneling dielectric. Sidewall dielectrics enclose the tunneling dielectric. Assist gates and coupling gates are formed on either side of the memory cell and are spaced from the floating gate of the memory cell by the sidewall dielectrics. Methods for forming memory cells include depositing a floating gate over a dielectric layer over a semiconductor substrate, depositing a tunneling dielectric over the floating gate, depositing an erase gate over the tunneling dielectric, patterning the erase gate, tunneling dielectric and floating gate to form memory cells having vertical sides, and depositing sidewall dielectrics on the vertical sides of the memory cells to seal the tunneling dielectrics. Additional steps are performed to complete the cells. |
