发明名称 THIN FILM TRANSISTOR PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A thin film transistor display panel according to an embodiment of the present invention comprises: an insulation substrate; a thin film transistor disposed on the insulation substrate; a first protection film disposed on the thin film transistor and including an inorganic insulating material; a second protection film disposed on the first protection film and including an organic insulating material; a first electric field generating electrode disposed on the second protection film; a third protection film disposed on the first electric field generating electrode; a first contact hole disposed on the first protection film, the second protection film, and the third protection film and exposing a portion of the thin film transistor; and a second electric field generating electrode disposed on the third protection film and connected to the thin film transistor through the first contact hole, wherein the first protection film exposes a portion of the thin film transistor and includes a first contact hole pattern which is spaced apart from the first protection film.</p>
申请公布号 KR20140088810(A) 申请公布日期 2014.07.11
申请号 KR20130000770 申请日期 2013.01.03
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 PARK, SUNG KYUN;PARK, JEONG MIN;LEE, JUNG SOO;JU, JIN HO
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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