METHOD OF MANUFACTURING A FIN FET

摘要

A method of manufacturing a FIN FET forms a first active pin having a first line width in a first area on a semiconductor substrate, and a second active pin having a second line width narrower than the first line width in a second region of the semiconductor substrate. A gate oxide layer is formed on surfaces of the first and second active pins through a deposition process. A gate electrode is formed on the gate oxide layer. The FIN FET formed through the above process is highly integrated and represents an excellent electrical characteristic.