THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR DISPLAY BOARD

摘要

PROBLEM TO BE SOLVED: To prevent the performance deterioration of a thin-film transistor using an oxide semiconductor.SOLUTION: The thin-film transistor includes: a channel region including the oxide semiconductor; a source electrode and a drain electrode connected to the channel region and disposed on both sides of the channel region so as to face to each other; an insulating layer disposed on the channel region; a gate electrode disposed on the insulating layer; and a protective film disposed on the source electrode and the drain electrode. The drain electrode has a first drain region and a second drain region that excludes the first drain region. The protective film has a first contact hole for exposing the first drain region of the drain electrode. The charge mobility of the first drain region is equal to or higher than the charge mobility of the second drain region.