DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION

摘要

Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

主权项

1. A method, comprising:
positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber; biasing the substrate; treating the substrate to roughen a portion of the silicon oxide layer; heating the substrate to a first temperature; exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride (NH4F) to form one or more volatile products; and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.