METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.

主权项

1. A method of manufacturing semiconductor device by a supercritical fluid carried with a co-solvent to modify the defects of semiconductor device, comprising:
forming a gate dielectric layer on a gate by conducting a first hydrogen plasma treatment; forming an active layer on the gate dielectric layer by conducting a second hydrogen plasma treatment; and disposing a source and a drain on the active layer, wherein the semiconductor device having a plurality of defects, and the active layer being a metal oxide thin film; annealing the semiconductor device, wherein the temperature for annealing the semiconductor device is between 350° C. and 450° C.; transferring the semiconductor device into a chamber at 100° C. to 200° C. and 1500 psi to 3000 psi; and injecting a supercritical fluid carried with a co-solvent into the chamber to modify the plurality of defects.