| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition which is improved in lithography characteristics by improving solubility in a developer, and to provide a method for forming a resist pattern.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid, contains a base component (A) whose solubility in a developer changes by the action of an acid. The base component (A) contains a polymer compound (A1) which has a constituent unit (a0) represented by formula (a0-1), a constituent unit (a2) containing a lactone-containing cyclic group, an -SO--containing cyclic group, or a carbonate-containing cyclic group, and a constituent unit (a1) containing an acid-decomposable group whose polarity increases by the action of an acid. The weight-average molecular weight of the polymer compound (A1) is 6,000 or less. |
