| 发明名称 |
BACK-SIDE ELECTRODE OF P-TYPE SOLAR CELL |
| 摘要 |
A back-side aluminum electrode adjacently formed on silicon wafer of p-type solar cell, comprising, (a) first aluminum layer and (b) second aluminum layer, wherein (a) first aluminum layer formed adjacent to the silicon wafer, formed from first aluminum paste comprises aluminum powder and glass frit, wherein the weight ratio of the glass frit for the aluminum powder (glass/aluminum) is 0.02-1.0, and wherein (b) second aluminum layer formed adjacent to the first aluminum layer, formed from second aluminum paste comprises at least aluminum powder, wherein the weight ratio (glass/aluminum) of the second aluminum paste is less than the weight ratio(glass/aluminum) of the first aluminum paste. |
| 申请公布号 |
US2014190560(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201313737091 |
申请日期 |
2013.01.09 |
| 申请人 |
E I DU PONT DE NEMOURS AND COMPANY |
发明人 |
INABA AKIRA;Kondo Takeshi |
| 分类号 |
H01L31/18;H01L31/0224 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A back-side aluminum electrode adjacenty formed on silicon wafer of p-type solar cell, comprising (a) first aluminum layer and (b) second aluminum layer,
wherein (a) first aluminum layer formed on the silicon wafer, formed from first aluminum paste comprises aluminum powder and glass frit, wherein the weight ratio of the glass frit for the aluminum powder (glass/aluminum) is 0.02-1.0, and wherein (b) second aluminum layer formed on the first aluminum layer, formed from second aluminum paste comprises at least aluminum powder, wherein the weight ratio (glass/aluminum) of the second aluminum paste is less than the weight ratio (glass/aluminum) of the first aluminum paste. |
| 地址 |
Wilmington DE US |
