发明名称 ADAPTIVE VOLTAGE INPUT TO A CHARGE PUMP
摘要 A memory subsystem includes an adaptive output voltage to provide a voltage based on a power profile of a memory device of the memory subsystem. A charge pump increases the voltage to a level needed to write data to the memory device. The voltage provided is based on the power profile of the memory device, which indicates a voltage level that provides good efficiency for the charge pump, and is within maximum levels for the memory device. The voltage can be higher than a nominal voltage indicated for the memory device in a specification.
申请公布号 US2014192607(A1) 申请公布日期 2014.07.10
申请号 US201213976791 申请日期 2012.05.08
申请人 Bains Kuljit;Vergis George 发明人 Bains Kuljit;Vergis George
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项 1. A memory subsystem comprising: a memory device to store data, the memory device to receive an input voltage at a first voltage level, wherein writing data to the memory device uses a second voltage level higher than the first voltage level; a charge pump to increase the input voltage from the first voltage level to the second voltage level; and an adaptive voltage supply to provide the first voltage level based on a power profile of the memory device, the power profile indicating a maximum input voltage level for the memory device.
地址 Olympia WA US
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