发明名称 |
ADAPTIVE VOLTAGE INPUT TO A CHARGE PUMP |
摘要 |
A memory subsystem includes an adaptive output voltage to provide a voltage based on a power profile of a memory device of the memory subsystem. A charge pump increases the voltage to a level needed to write data to the memory device. The voltage provided is based on the power profile of the memory device, which indicates a voltage level that provides good efficiency for the charge pump, and is within maximum levels for the memory device. The voltage can be higher than a nominal voltage indicated for the memory device in a specification. |
申请公布号 |
US2014192607(A1) |
申请公布日期 |
2014.07.10 |
申请号 |
US201213976791 |
申请日期 |
2012.05.08 |
申请人 |
Bains Kuljit;Vergis George |
发明人 |
Bains Kuljit;Vergis George |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
1. A memory subsystem comprising:
a memory device to store data, the memory device to receive an input voltage at a first voltage level, wherein writing data to the memory device uses a second voltage level higher than the first voltage level; a charge pump to increase the input voltage from the first voltage level to the second voltage level; and an adaptive voltage supply to provide the first voltage level based on a power profile of the memory device, the power profile indicating a maximum input voltage level for the memory device. |
地址 |
Olympia WA US |