发明名称 Stacked Half-Bridge Package
摘要 According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source.
申请公布号 US2014191337(A1) 申请公布日期 2014.07.10
申请号 US201414209569 申请日期 2014.03.13
申请人 International Rectifier Corporation 发明人 Cho Eung San;Cheah Chuan;Sawle Andrew N.
分类号 H01L23/495;H01L25/07 主分类号 H01L23/495
代理机构 代理人
主权项
地址 El Segundo CA US