| 摘要 |
FIELD: process engineering.SUBSTANCE: invention relates to refractory industry, particularly, to production of large-size quartz crucibles for smelting if silicon used in production of semiconductors. Proposed process comprises production of high-concentration suspension of quartz glass, its stabilisation, making the crucible blank, drying and annealing. Note here that crucible blank drying is performed at 150-300°C with curing for at least 1-3 h. Thereafter, blank inner surface is impregnated with methyl phenyl helical siloxane to the depth of 1-5 mm. Then, inner surface is coated by the same polymer with filler of silicon nitride in amount of 30-70% followed by polymerisation and annealing at 950-1000°C.EFFECT: simplified production.2 ex |
