发明名称 CHARGED PARTICLE BEAM DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To solve such a problem that nondestruction defect extraction and analysis take time to switch the acceleration voltage, or the like, and electron beam irradiation with high acceleration voltage causes defects or contamination.SOLUTION: Luminance associated conditioning of a BSE (Back Scattered Electron) image is performed by luminance feature classification in the ADC (Automatic Defect Classification) function of a defect extraction device. Information of the luminance associated conditioning is stored (316), and this information is operated as a recipe file. Consequently, simple elemental analysis of a defect or a wafer, and shortening of processing time can be achieved without using an acceleration voltage≥3,000 V. Furthermore, since repeated irradiation of a defect or a wafer with an electron beam is eliminated, contamination can be reduced.</p>
申请公布号 JP2014130745(A) 申请公布日期 2014.07.10
申请号 JP20120288025 申请日期 2012.12.28
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ARAI HIROMITSU
分类号 H01J37/22;H01J37/28 主分类号 H01J37/22
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