COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A complementary metal oxide semiconductor field-effect transistor (MOSFET) includes a substrate, a first MOSFET and a second MOSFET. The first MOSFET is disposed on the substrate within a first transistor region and the second MOSFET is disposed on the substrate within a second transistor region. The first MOSFET includes a first fin structure, two first lightly-doped regions, two first doped regions and a first gate structure. The first fin structure includes a first body portion and two first epitaxial portions, wherein each of the first epitaxial portions is disposed on each side of the first body portion. A first vertical interface is between the first body portion and each of the first epitaxial portions so that the first-lightly doped region is able to be uniformly distributed on an entire surface of each first vertical interface.

主权项

1. A complementary metal oxide semiconductor field-effect transistor (MOSFET) comprising:
a substrate comprising a first transistor region and a second transistor region; a first MOSFET disposed in the first transistor region, wherein the first MOSFET comprises:
a first fin structure comprising a first body portion and two first epitaxial portions, wherein the first epitaxial portions are respectively disposed on each side of the first body portion, and a first vertical interface is interposed between the first body portion and each of the first epitaxial portions;two first lightly-doped regions respectively and uniformly formed on each of the entire first vertical interface;two first doped regions respectively disposed in each of the first epitaxial portions; anda first gate structure overlying the first body portion; and a second MOSFET disposed in the second transistor region.