| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of which malfunctions and variations of operation characteristics are reduced by reducing a gain of a parasitic bipolar transistor, and a manufacturing method of the semiconductor device.SOLUTION: On a top surface of a silicon layer 3, a silicone oxide film 6 is partially formed. On the silicone oxide film 6, a gate electrode 7 composed of polysilicon is partially formed. A part of the silicone oxide film 6 which exists below the gate electrode 7 functions as a gate insulating film. On a side surface of the gate electrode 7, a silicon nitride film 9 is formed with a silicone oxide film 8 sandwiched between them. The silicone oxide film 8 and the silicon nitride film 9 are formed on the silicone oxide film 6. A width W1 of the silicone oxide film 8 of a gate length direction is larger than a film thickness T1 of the silicone oxide film 6. |
