MAGNETORESISTIVE ELEMENT, MAGNETIC STORAGE DEVICE USING THE SAME, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetic storage element in which operation variation is reduced by suppressing influence of a leakage magnetic field.SOLUTION: The magnetoresistive element includes a first ferromagnetic layer which has an easy magnetization axis perpendicular to a substrate surface, and whose magnetization direction is changeable; a second ferromagnetic layer which has an easy magnetization axis perpendicular to the substrate surface, and whose magnetization direction is fixed; a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first perpendicular material layer which is arranged at a side of the first ferromagnetic layer with a distance for not allowing exchange coupling with the first ferromagnetic layer, and has a perpendicular magnetic anisotropy being antiparallel to the magnetization direction of the second ferromagnetic layer; and a second perpendicular material layer which is arranged at a side of the second ferromagnetic layer has a perpendicular magnetic anisotropy being parallel to the magnetization direction of the second ferromagnetic layer, and is magnetostatically coupled with the second ferromagnetic layer.