发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE TRANSFER METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which inhibits scattering of particles in a spare chamber at the time of carrying out a substrate.SOLUTION: A substrate processing apparatus 1 comprises: a first transfer chamber 2 including processing chambers 5, 6 for processing substrates 10 and first transfer means 9 for transferring the substrates to the processing chambers 5, 6; a second transfer chamber 36 including second transfer means 46 for transferring the substrates; spare chambers 3, 4 which includes substrate holding tools 29, 31 for holding the substrates, respectively and links the first transfer chamber and the second transfer chamber and able to be decompressed; loading parts 43, 44, 45 on which substrate housing containers 39, 40, 41 are loaded, respectively, in a state of being linked with the second transfer chamber and housing a plurality of substrates; and transfer control means 64 for controlling transfer of the substrate between the loading parts and the processing chambers. The transfer control means transfers the substrates when carrying out the substrates from the spare chambers in an atmospheric pressure state, in order from the lowermost toward an upper side of the substrate holding tool in the spare chamber.</p>
申请公布号 JP2014130895(A) 申请公布日期 2014.07.10
申请号 JP20120287306 申请日期 2012.12.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YASHIMA TSUKASA
分类号 H01L21/677 主分类号 H01L21/677
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