发明名称 COMPOSITION FOR FORMING A DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING
摘要 The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
申请公布号 US2014193753(A1) 申请公布日期 2014.07.10
申请号 US201414183630 申请日期 2014.02.19
申请人 NAKASUGI Shigemasa;YAMAMOTO Kazuma;MIYAZAKI Shinji;PADMANABAN Munirathna;CHAKRAPANI Srinivasan 发明人 NAKASUGI Shigemasa;YAMAMOTO Kazuma;MIYAZAKI Shinji;PADMANABAN Munirathna;CHAKRAPANI Srinivasan
分类号 G03F7/20;G03C1/73 主分类号 G03F7/20
代理机构 代理人
主权项 1. A composition for forming a bottom anti-reflective coating, comprising a solvent, a polymer represented by the following formula (1): -Am-Bn-  (1) in which A and B are repeating units represented by the following formulas (A) and (B), respectively: whereineach of R11 and R12 is independently hydrogen or an alkyl group;L11 is a single bond, COO or a straight- or branched chain alkylene containing one or more carbon atoms;Y is a condensed polycyclic aromatic group containing two or more benzene rings; andZ is a group selected from the group consisting of R3COOR4 and R3OR4, provided that R3 is a single bond, oxygen or a straight- or branched chain alkylene which may have a fluorine atom and which contains one or more carbon atoms and also provided that R4 is hydrogen or a substituted or non-substituted hydrocarbon group; each of m and n is a number indicating the polymerization degree provided that m is not less than 10 and n is not less than 0; and,a compound comprising an anhydride represented where the compound is represented by any of the following formulas (2) to (4): is represented by any of the following formulas (2) to (4): in which each of R21, R22 and R23 is independently a group selected from the group consisting of hydrogen, alkyl, aryl, halogen atom, alkoxy, nitro, aldehyde, cyano, amido, dialkylamino, sulfonamide, imido, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamino, and arylamino; in which each of R41 and R42 is independently a group selected from the group consisting of hydrogen, alkyl, aryl, halogen atom, alkoxy, nitro, aldehyde, cyano, amido, dialkylamino, sulfonamide, imido, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamine, and arylamino.
地址 Kakegawa-shi, JP