SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD AND OPERATING METHOD FOR THE SAME

摘要

A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a deep well, a first well, a first doped electrode region, a second doped electrode region and a high threshold voltage channel region. The substrate has a first type conductivity. The deep well is formed in the substrate and has a second type conductivity opposite to the first conductivity. The first well is formed in the deep well and has at least one of the first type conductivity and the second type conductivity. The first and the second doped electrode regions are formed in the first well. The second doped electrode is adjacent to the first doped electrode and has the second conductivity. The high threshold voltage channel region is formed in the first well and extending down from the surface of the substrate.

主权项

1. A semiconductor device, comprising:
a substrate having a first type conductivity; a deep well formed in the substrate and having a second type conductivity opposite to the first type conductivity; a first well formed in the deep well, wherein the first well has at least one of the first type conductivity and the second type conductivity; a first doped electrode region formed in the first well and having the first type conductivity; a second doped electrode region having the second type conductivity, wherein the second doped electrode is formed in the first well and adjacent to the first doped electrode region; a high threshold voltage channel region formed in the first well and having the second type conductivity, wherein the high threshold voltage channel extends down from a surface of the substrate and covers parts of a surface of the second doped electrode, wherein a surface of the high threshold voltage channel having a first side, a second side opposite to the first side, a third side and the fourth side opposite to the third side, the first side and the second side are adjoined to the third side and the fourth side.