| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device comprising a thin film transistor having stable electric characteristics, and a method of manufacturing a highly reliable semiconductor device with a low cost and high productivity.SOLUTION: In a semiconductor device comprising a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one kind or more of metal elements of iron, nickel, cobalt, copper, gold, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.</p> |
