| 发明名称 |
APPARATUS AND METHOD FOR REDUCING RESIDUAL STRESS OF SEMICONDUCTOR |
| 摘要 |
An apparatus for reducing residual stress of a semiconductor includes a stage configured to support a semiconductor wafer having the residual stress generated by a semiconductor manufacturing process. The apparatus includes an intense pulsed light (IPL) irradiation unit configured to irradiate IPL to the semiconductor wafer to reduce the residual stress of the semiconductor wafer, the IPL radiation unit being separated from the stage. The apparatus further includes at least one alignment unit configured to adjust relative positions of the stage and the IPL irradiation unit. |
| 申请公布号 |
US2014193984(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201314143759 |
申请日期 |
2013.12.30 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK Jae Dong;KIM Hak Sung;LEE Jeong Sam;JEON Eun Beom;JIN Ho-Tae |
| 分类号 |
H01L21/67;H01L21/263 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus for reducing residual stress of a semiconductor, the apparatus comprising:
a stage configured to support a semiconductor wafer having the residual stress generated by a semiconductor manufacturing process; an intense pulsed light (IPL) irradiation unit configured to irradiate IPL to the semiconductor wafer to reduce the residual stress of the semiconductor wafer, the IPL radiation unit being separated from the stage; and at least one alignment unit configured to adjust relative positions of the stage and the IPL irradiation unit. |
| 地址 |
Suwon-Si KR |
