| 摘要 |
PROBLEM TO BE SOLVED: To deposit an oxide semiconductor film having high crystallinity.SOLUTION: An oxide semiconductor film having a single crystal region, which is deposited by a spattering method by using a spattering target which contains a polycrystalline oxide having a plurality of crystal grains is provided. Since the plurality of crystal grain contained in the spattering target has a cleavage plane due to weak crystal binding or a plane which is easy to be cleaved due to weak crystal binding, cleavage planes of the plurality of crystal grains are cleaved by ion collision on the spattering target and tabular spattering grains can be obtained. When the tabular spattering grains obtained are accumulated on a deposition target plane, an oxide semiconductor film is deposited. Since the tabular pattering grains are formed by partial peeling of the crystal grains, the oxide semiconductor film having high crystallinity can be achieved. |
