发明名称 METHOD AND LAYOUT OF AN INTEGRATED CIRCUIT
摘要 An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.
申请公布号 US2014195997(A1) 申请公布日期 2014.07.10
申请号 US201313778912 申请日期 2013.02.27
申请人 TSENG Hsiang-Jen;CHIANG Ting-Wei;CHEN Wei-Yu;SUN Ruei-Wun;TSENG Hung-Jung;CHEN Shun Li;TIEN Li-Chun 发明人 TSENG Hsiang-Jen;CHIANG Ting-Wei;CHEN Wei-Yu;SUN Ruei-Wun;TSENG Hung-Jung;CHEN Shun Li;TIEN Li-Chun
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项 1. An integrated circuit layout, comprising: a P-type active region and an N-type active region; a plurality of trunks, each trunk of the plurality of trunks is formed substantially side-by-side and is substantially in parallel with each other; a first metal connection; and a second metal connection, wherein the first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region;the second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region;an axis of the first metal connection is substantially in parallel with an axis of the second metal connection;each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection;each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection; anda first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks.
地址 Hsinchu City TW