发明名称 |
METHOD AND LAYOUT OF AN INTEGRATED CIRCUIT |
摘要 |
An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks. |
申请公布号 |
US2014195997(A1) |
申请公布日期 |
2014.07.10 |
申请号 |
US201313778912 |
申请日期 |
2013.02.27 |
申请人 |
TSENG Hsiang-Jen;CHIANG Ting-Wei;CHEN Wei-Yu;SUN Ruei-Wun;TSENG Hung-Jung;CHEN Shun Li;TIEN Li-Chun |
发明人 |
TSENG Hsiang-Jen;CHIANG Ting-Wei;CHEN Wei-Yu;SUN Ruei-Wun;TSENG Hung-Jung;CHEN Shun Li;TIEN Li-Chun |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit layout, comprising:
a P-type active region and an N-type active region; a plurality of trunks, each trunk of the plurality of trunks is formed substantially side-by-side and is substantially in parallel with each other; a first metal connection; and a second metal connection, wherein
the first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region;the second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region;an axis of the first metal connection is substantially in parallel with an axis of the second metal connection;each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection;each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection; anda first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks. |
地址 |
Hsinchu City TW |