METHODS FOR ETCHING THROUGH-WAFER VIAS IN A WAFER

摘要

Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.

主权项

1. A method of etching a wafer, the method comprising:
positioning the wafer within a chamber of a plasma etcher; generating plasma ions using a radio frequency power source and a plasma source gas; directing the plasma ions toward the wafer using an electric field; focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer; and etching a plurality of through-wafer vias in the wafer.