| 摘要 |
Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal. |
| 主权项 |
1. A semiconductor integrated circuit device having an ESD (Electro Static Discharge) protection circuit, wherein:
the ESD protection circuit comprises:
a first wiring extending in a first direction and electrically connected to a first terminal;a second wiring and a third wiring extending in the first direction, electrically connected to a power supply terminal or a ground terminal, and disposed on both sides of the first wiring respectively;a first diffusion region and a second diffusion region that are connected to and formed under the first wiring, having a same first conductivity type with each other, disposed between the second wiring and the third wiring, in a second direction perpendicular to the first direction, the first and second diffusion regions being at least partially separated from each other;a third diffusion region connected to and formed under the second wiring, having a second conductivity type, and disposed so as to be opposed to the first diffusion region in the second direction; anda fourth diffusion region connected to and formed under the third wiring, having the second conductivity type, and disposed so as to be opposed to the second diffusion region in the second direction, the third diffusion region, the first diffusion region, the second diffusion region and the fourth diffusion region are disposed in this order in the second direction, and the first conductivity type is different from the second conductivity type. |
