| 发明名称 |
FINFET COMPATIBLE DIODE FOR ESD PROTECTION |
| 摘要 |
A diode for integration with finFET devices is disclosed. An in-situ doped epitaxial silicon region is grown on the cathode or anode of the diode to increase the surface area of the junction and overall silicon volume for improved heat dissipation during an ESD event. |
| 申请公布号 |
US2014191319(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201313733943 |
申请日期 |
2013.01.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;GLOBALFOUNDRIES, INC. |
发明人 |
Cheng Kangguo;Ponoth Shom;Pranatharthiharan Balasubramanian;Standaert Theodorus Eduardus;Yamashita Tenko;Miller Robert J. |
| 分类号 |
H01L29/78;H01L21/02 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor diode comprising,
an N− region; an L-shaped P− region formed within the N− region, wherein the L-shaped P− region forms an L-shaped junction with the N− region; and a P+ region disposed above and alongside the P− region. |
| 地址 |
Armonk NY US |
