GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE

摘要

An array of GaN-based vertical JFETs includes a GaN substrate comprising a drain of one or more of the JFETs and one or more epitaxial layers coupled to the GaN substrate. The array also includes a plurality of hexagonal cells coupled to the one or more epitaxial layers and extending in a direction normal to the GaN substrate. Sidewalls of the plurality of hexagonal cells are substantially aligned with respect to crystal planes of the GaN substrate. The array further includes a plurality of channel regions, each having a portion adjacent a sidewall of the plurality of hexagonal cells, a plurality of gate regions of one or more of the JFETs, each electrically coupled to one or more of the plurality of channel regions, and a plurality of source regions of one or more of the JFETs electrically coupled to one or more of the plurality of channel regions.

主权项

1. An array of GaN-based vertical JFETs comprising:
a GaN substrate comprising a drain of one or more of the JFETs; one or more GaN epitaxial layers coupled to the GaN substrate; a plurality of hexagonal cells coupled to the one or more GaN epitaxial layers and extending in a direction normal to the GaN substrate, wherein sidewalls of the plurality of hexagonal cells are substantially aligned with respect to crystal planes of the GaN substrate; a plurality of channel regions, each having a portion adjacent a sidewall of the plurality of hexagonal cells; a plurality of gate regions of one or more of the JFETs, each electrically coupled to one or more of the plurality of channel regions; and a plurality of source regions of one or more of the JFETs electrically coupled to one or more of the plurality of channel regions.