| 摘要 |
PROBLEM TO BE SOLVED: To provide a double-well structure SOI radiation sensor in which a photo diode and a transistor are formed on the same semiconductor substrate via an insulating film and having small parasitic capacitance, and to provide a method of manufacturing the same.SOLUTION: A double-well structure SOI radiation sensor includes: a photo diode 30 having a semiconductor layer 11 of one conductivity type and a semiconductor region 232 of an opposite conductivity type provided in the semiconductor layer 11; a semiconductor layer 9 provided on the semiconductor layer and in which a transistor element 40 is formed; an insulating layer 10 between the semiconductor layer 9 and the semiconductor layer 11; a semiconductor region 114 of the one conductivity type provided in the semiconductor layer 11, having higher impurity concentration than the semiconductor layer 11, and to which a first fixed potential is provided; a semiconductor region 116 of the opposite conductivity type surrounding the semiconductor region 114, provided spaced apart from the semiconductor region 114, and to which a second fixed potential is provided; and a fourth semiconductor region 11 of the one conductivity type having lower impurity concentration than the semiconductor region 114 and located between the semiconductor region 114 and the third semiconductor region 116. |
