FIELD EFFECT TRANSISTOR HAVING CHANNEL CORE THAT IS IMPROVED SO AS TO REDUCE LEAKAGE CURRENT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide NWFET and fin-FET structures in which power consumption is reduced.SOLUTION: A semiconductor device includes a channel structure formed on a surface of a substrate, and the channel structure 303/304 is formed of a semiconductor material. A gate structure covers at least part of the surface of the channel structure and is constituted of a film 305 composed of an insulating material, and gate electrodes 306 and 307. A source structure is connected to one end part of the channel structure; and a drain structure is connected to the other end part of the channel structure. The channel structure includes a structure component 303 that reduces a leakage current of the semiconductor device.