主权项 |
1. A temperature measuring method for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising
using a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range, applying the first wavelength light and the second wavelength light to the semiconductor layer along a common path and detecting quantities of the first wavelength light and the second wavelength light with a light detecting device facing the semiconductor layer, and when the detected quantity of the second wavelength light starts to decrease after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, calculating a current temperature of the semiconductor layer within the second range from a current detected quantity of the second wavelength light and a decrease in the detected quantity of the first wavelength light. |