发明名称 COLLECTIONS OF LATERALLY CRYSTALLIZED SEMICONDUCTOR ISLANDS FOR USE IN THIN FILM TRANSISTORS
摘要 Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.
申请公布号 US2014193935(A1) 申请公布日期 2014.07.10
申请号 US201314055742 申请日期 2013.10.16
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK 发明人 IM James S.;CHUNG Ui-Jin
分类号 H01L33/16 主分类号 H01L33/16
代理机构 代理人
主权项 1. A method of manufacturing display devices comprised of a plurality of thin films transistors (TFTs) on a substrate, the method comprising the steps of: (a) fabricating the plurality of thin film transistors (TFTs) on the substrate, said TFTs spaced apart from each other and each including a channel region that has a crystalline microstructure and a direction along which a channel current flows; (b) wherein the channel region of each of the plurality of TFTs includes a plurality of crystalline stripes, each spanning the length of the channel region along its channel direction, and wherein each crystalline stripe of the plurality of stripes is physically disconnected from and crystallographically uncorrelated with other stripes of the plurality of stripes in that channel region or in the channel regions of adjacent TFTs; (c) wherein at least one crystalline stripe contains a crystallographic grain that spans the length of the channel region along its channel direction, and wherein the at least one crystallographic grain is physically disconnected from and crystallographically uncorrelated with at least another crystallographic grain in that channel region or the plurality of stripes in the channel regions of adjacent TFTs.
地址 New York NY US
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