METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING

摘要

Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

主权项

1. A method for identifying electrically isolated or poorly connected regions in a solar cell, said solar cell comprising a portion of an indirect bandgap semiconductor wafer having at least one metal pattern disposed on a surface thereof, said method comprising the steps of:
exciting said solar cell to emit luminescence; capturing at least one image of said emitted luminescence; and identifying electrically isolated or poorly connected regions in said solar cell based on a comparison of intensities of regions in said at least one luminescence image.