发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND SEMICONDUCTOR DEVICE |
摘要 |
One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching the surfaces of electrodes of the semiconductor element and a circuit groove having a desired shape and a desired depth, a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern portion, a film-separating step of separating the resin film from the covering insulating layer, and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated. |
申请公布号 |
US2014191406(A1) |
申请公布日期 |
2014.07.10 |
申请号 |
US201214235766 |
申请日期 |
2012.10.18 |
申请人 |
PANASONIC CORPORATION |
发明人 |
Takashita Hiromitsu;Takeda Tsuyoshi;Kashihara Keiko;Fujiwara Hiroaki;Yoshioka Shingo |
分类号 |
H01L21/768;H01L23/48;H01L21/56 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method for a semiconductor package comprising:
a covering step of forming a covering insulating layer that covers a surface of a semiconductor element on which electrodes are formed, the semiconductor element including the electrodes on a principal plane thereof; a film-forming step of forming a resin film on a surface of the covering insulating layer on the electrodes side of the semiconductor element; a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching surfaces of the electrodes and a circuit groove having a desired shape and a desired depth, by applying laser processing or embossing to the covering insulating layer from an outer surface side of the resin film; a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on a surface of the circuit pattern portion and a surface of the resin film; a film-separating step of separating the resin film from the covering insulating layer; and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated. |
地址 |
Osaka JP |