发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND SEMICONDUCTOR DEVICE
摘要 One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching the surfaces of electrodes of the semiconductor element and a circuit groove having a desired shape and a desired depth, a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern portion, a film-separating step of separating the resin film from the covering insulating layer, and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated.
申请公布号 US2014191406(A1) 申请公布日期 2014.07.10
申请号 US201214235766 申请日期 2012.10.18
申请人 PANASONIC CORPORATION 发明人 Takashita Hiromitsu;Takeda Tsuyoshi;Kashihara Keiko;Fujiwara Hiroaki;Yoshioka Shingo
分类号 H01L21/768;H01L23/48;H01L21/56 主分类号 H01L21/768
代理机构 代理人
主权项 1. A manufacturing method for a semiconductor package comprising: a covering step of forming a covering insulating layer that covers a surface of a semiconductor element on which electrodes are formed, the semiconductor element including the electrodes on a principal plane thereof; a film-forming step of forming a resin film on a surface of the covering insulating layer on the electrodes side of the semiconductor element; a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching surfaces of the electrodes and a circuit groove having a desired shape and a desired depth, by applying laser processing or embossing to the covering insulating layer from an outer surface side of the resin film; a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on a surface of the circuit pattern portion and a surface of the resin film; a film-separating step of separating the resin film from the covering insulating layer; and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated.
地址 Osaka JP