发明名称 DESIGN OF INDUCTION COUPLING PLASMA SOURCE FOR IMPROVING PLASMA UNIFORMITY AND EFFECT
摘要 PROBLEM TO BE SOLVED: To provide an induction coupling plasma reactor in which at least a part of roof has an enclosure forming a dielectric window.SOLUTION: A substrate support is arranged in an enclosure under a dielectric window. An RF power applicator is disposed above the dielectric window, so as to apply an RF power in the enclosure through the dielectric window. A plurality of gas injection devices are distributed uniformly above the substrate support, so as to supply process gas into the enclosure. A circular baffle is arranged in the enclosure so as to limit process gas flow, and disposed above the substrate support but below the plurality of gas injection devices.
申请公布号 JP2014130803(A) 申请公布日期 2014.07.10
申请号 JP20130227576 申请日期 2013.10.31
申请人 ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI 发明人 XU SONG LIN;GANG SHI;NI TUCHIAN
分类号 H05H1/46;C23C16/455;C23C16/505;H01L21/3065 主分类号 H05H1/46
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