发明名称 |
DESIGN OF INDUCTION COUPLING PLASMA SOURCE FOR IMPROVING PLASMA UNIFORMITY AND EFFECT |
摘要 |
PROBLEM TO BE SOLVED: To provide an induction coupling plasma reactor in which at least a part of roof has an enclosure forming a dielectric window.SOLUTION: A substrate support is arranged in an enclosure under a dielectric window. An RF power applicator is disposed above the dielectric window, so as to apply an RF power in the enclosure through the dielectric window. A plurality of gas injection devices are distributed uniformly above the substrate support, so as to supply process gas into the enclosure. A circular baffle is arranged in the enclosure so as to limit process gas flow, and disposed above the substrate support but below the plurality of gas injection devices. |
申请公布号 |
JP2014130803(A) |
申请公布日期 |
2014.07.10 |
申请号 |
JP20130227576 |
申请日期 |
2013.10.31 |
申请人 |
ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI |
发明人 |
XU SONG LIN;GANG SHI;NI TUCHIAN |
分类号 |
H05H1/46;C23C16/455;C23C16/505;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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