| 发明名称 |
PIEZOELECTRIC THIN FILM RESONATOR AND FILTER |
| 摘要 |
A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region. |
| 申请公布号 |
US2014191826(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201314136363 |
申请日期 |
2013.12.20 |
| 申请人 |
HASHIMOTO Kenya;LIU Jiansong;UEDA Masanori;TANIGUCHI Shinji;NISHIHARA Tokihiro |
发明人 |
HASHIMOTO Kenya;LIU Jiansong;UEDA Masanori;TANIGUCHI Shinji;NISHIHARA Tokihiro |
| 分类号 |
H03H9/58;H03H9/17 |
主分类号 |
H03H9/58 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A piezoelectric thin film resonator comprising:
a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region. |
| 地址 |
Chiba JP |
