CMP SLURRY COMPOSITION FOR COPPER AND POLISHING METHOD USING THE SAME

摘要

A CMP slurry composition for polishing copper of the present invention comprises polishing particles; an oxidant; a complexing agent; a corrosion inhibitor; and de-ionized water, wherein the complexing agent is characterized by comprising at least one organic acid selected from an oxalic acid, a malic acid, a malonic acid, and a formic acid, and glycine. The present invention has an effect of providing a CMP slurry composition for polishing copper which can significantly reduce surface defects and can obtain improved polishing speed and polishing flatness when polishing a metal wire, especially a copper wire.