| 摘要 |
The present invention relates to cerium-based polishing particles and slurry including the same, and to manufacturing methods thereof. According to the present invention, through a drying process and a calcination process after a process for mixing a metal salt and water, the particle characteristics of cerium-based polishing particles are controlled and, simultaneously, the particle size distribution and dispersion of the cerium-based polishing particles can be narrowed in a manufacturing process of slurry. In addition, polishing particles which do not include coarse particles can be quickly obtained. Furthermore, provided is slurry using the cerium-based polishing particles, which reduces the generation of scratches and defects while maintaining a proper polishing rate and is capable of precisely polishing the surface of a semiconductor. |
