| 摘要 |
The ESD protection device for protecting an IC circuit from negative power surges on a connection field of the IC circuit and in particular on a communication bus connection field of the IC circuit is provided with an ESD protection component (18) for negative power surges, which is connected upstream of the IC circuit (12) and in particular connected in parallel to the IC circuit (12) to be protected, and which comprises a semiconductor substrate (28) which is doped with charge carriers of a first conduction type, a first trough (24) which is introduced by ion implantation into an upper face (26) of the semiconductor substrate (28), and which is doped with charge carriers having a second conduction type which is opposite relative to the first conduction type, and a drain connection region (34) which is formed within the surface extent of the first trough (24) in the upper face (26) of the semiconductor substrate (28). |
