摘要 |
The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A includes at least one of the following elements: Ga, Ge, Zn; M includes at least one of the following elements: V, Nb, Ta, Mo; and X includes at least one of the following elements: S, Se. |