发明名称 POWER BJT WITH EMITTER BALLAST RESISTOR
摘要 The present invention provides a power BJT of an emitter ballast resistor. In the power BJT of the emitter ballast resistor according to the present invention, a plurality of unit power BJTs are connected between an input pad (3) and an output pad (4). In the unit power BJT, a base (20) and a collector (30) are laminated under an emitter (10), and bases (20) are provided at both sides of the emitter (10) to form a two-base one-emitter structure. An emitter metal contact (12) is provided in the emitter (10) area, and base metal contacts (22) are provided in the bases (20) provided at both sides of the emitter metal contact (12). An emitter metal (14) and a base metal (24) are bonded to the emitter metal contact (12) and the base metal contact (22), respectively to form the two-base one-emitter structure.
申请公布号 KR101416677(B1) 申请公布日期 2014.07.09
申请号 KR20130038487 申请日期 2013.04.09
申请人 AP SEMICONDUCTOR CO., LTD. 发明人 RHEE, YONG HAK;KIM, TAE HAN;LEE, UN GU
分类号 H01L29/73 主分类号 H01L29/73
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