发明名称 TRANSISTOR SWITCH AND RF SWITCH
摘要 The present invention relates to a transistor switch and an RF switch. According to one embodiment of the present invention, suggested is the transistor switch which includes: an SOI transistor; and an auxiliary transistor which complimentarily operates with the SOI transistor. Wherein, one end of the auxiliary transistor is connected a gate of the SOI transistor and the other end thereof is connected to the body of the SOI transistor. Also, the RF switch is suggested.
申请公布号 KR20140087510(A) 申请公布日期 2014.07.09
申请号 KR20120157889 申请日期 2012.12.31
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PARK, SANG WOOK;PARK, SUNG HWAN
分类号 H03K17/687;H04B1/48 主分类号 H03K17/687
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