发明名称 APPARATUSES AND METHODS OF OPERATING FOR MEMORY ENDURANCE
摘要 <p>Methods of operating an apparatus such as a computing system and/or memory device for memory endurance are provided. One example method can include receiving m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state. The m digits of data are encoded into n digits of data having a second quantity of digits represented by the first data state. The value n is greater than the value m. The second quantity is less than or equal to the first quantity. The n digits of data are stored in an apparatus having memory cells.</p>
申请公布号 EP2751659(A1) 申请公布日期 2014.07.09
申请号 EP20120829034 申请日期 2012.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 VARANASI, CHANDRA C.
分类号 G06F3/06;G11C16/02 主分类号 G06F3/06
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