| 摘要 |
Provided is a method to form an ion implantation area in a semiconductor device. The present invention comprises: (a) a step of providing a semiconductor substrate having a plurality of areas where ions are implanted; (b) a step of forming a photoresist pattern formed of a photoresist composite chemically amplified while including a matrix polymer with an acid labile group, a photo acid generator, and a solvent on the semiconductor substrate; (c) a step of coating a descumming composite including a matrix polymer, a free acid, and a solvent on the photoresist pattern; (d) a step of heating the coated semiconductor substrate; (e) a step of removing the remained descumming composite and scum from the substrate by making the coated semiconductor substrate come in contact with a cleaning agent; and (f) a step of implanting the ions in the plurality of areas of the semiconductor substrate using the photoresist pattern as an implantation mask. |
