发明名称 |
DEPOSITION METHOD OF PASSIVATION FILM FOR LIGHT EMITTING DIODE |
摘要 |
The present invention relates to a method for depositing a passivation film for a light emitting device by plasma chemical vapor deposition by supplying reactive gas made of oxygen and precursor gas comprising linear siloxane compounds with a preset flow rate. The precursor gas is hexamethyldisiloxane (HMDSO). |
申请公布号 |
KR20140087470(A) |
申请公布日期 |
2014.07.09 |
申请号 |
KR20120157817 |
申请日期 |
2012.12.31 |
申请人 |
TES CO., LTD. |
发明人 |
KIM, JONG WOOK;BAN, WON JIN |
分类号 |
H01L51/56;H05B33/10 |
主分类号 |
H01L51/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|