| 摘要 |
Provided by the present invention is a method for forming an ion implantation area in a semiconductor device. The present invention includes the following steps of: (a) providing a semiconductor substrate which has multiple ion implantation areas; (b) forming a photoresist pattern, which is formed from a chemically amplified photoresist composition which includes a matrix polymer having an acid labile group, a photoacid generator, and a solvent, on the semiconductor substrate; (c) coating a descumming composition on the photoresist pattern (wherein, the descumming composition includes: a matrix polymer; an acid generator which is selected from a thermal generator, a photoacid generator, and a mix thereof; and a solvent.); (d) exposing the coated semiconductor substrate to light under a condition which generates an acid from the acid generator in the descumming composition; (e) removing the descumming composition and scum, which remain by a contact between the coated semiconductor substrate and a cleaning agent, from the substrate; and (f) implanting ion to multiple semiconductor substrate areas by using the photoresist pattern as an implantation mask. The present invention is able to find a special use possibility in the manufacture of a semiconductor device. |
