SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT SOURCE DEVICE INCLUDING THE SAME

摘要

A semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure that includes an active layer (24) of which a principal surface is formed by a non-polar plane or semi-polar plane and which is configured to emit polarized light; and a plurality of stripe structures provided at positions traversed by the polarized light with intervals therebetween, wherein an absolute value of an angle between an extending direction of the plurality of stripe structures and a polarization direction of the polarized light is not less than 3° and not more than 45°.