COMPLEMENTARY RESISTANCE SWITCHING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention comprises a lower electrode formed on a substrate; a metal oxide layer formed on the lower electrode and has resistance switching features; and an upper electrode formed on the metal oxide layer. The metal oxide layer comprises a plurality of layers having different bandgap energies. The lowest layer which is adjacent to the lower electrode layer and the highest layer which is adjacent to the upper electrode are formed with the same kinds of oxide film having a bandgap energy smaller than the bandgap energy of the layer of a center unit formed between the lowest layer and the highest layer. The layer of the center unit is formed with the oxide film having the strongest bandgap energy among the plurality of layers. Provided is a complementary resistance switching memory device without a diode or a selective device.