发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A semiconductor device according to the present invention comprises a semiconductor layer; a gate electrode covering the end of the semiconductor layer; and an insulating layer insulating the semiconductor layer and the gate electrode. The thickness of the insulating layer insulating an overlapping area between the end of the semiconductor layer and the gate electrode is thicker than that of an insulating layer covering the central portion of the semiconductor layer.</p> |
申请公布号 |
KR20140088067(A) |
申请公布日期 |
2014.07.09 |
申请号 |
KR20140078003 |
申请日期 |
2014.06.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZUKI YUKIE;ARAI YASUYUKI;MORIYA YOSHITAKA;IKEDA KAZUKO;TANADA YOSHIFUMI;TAKAHASHI SYUHEI |
分类号 |
H01L29/78;H01L21/336;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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