发明名称 DEFECT CAPPING FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES
摘要 <p>An epitaxial article includes a substrate having a substrate surface having a substrate surface composition including crystalline defect or amorphous regions and crystalline non-defect regions. The crystalline defect or amorphous regions are recessed from the substrate surface by surface recess regions. A capping material fills the surface recess regions to provide capped defects that extend from a top of the defect regions to the substrate surface. The capping material is compositionally different from the substrate surface composition. An epitaxial layer over the substrate surface provides an average crystalline defect density in at least one area having a size≧0.5μm2 that is≧two times lower than an average crystalline defect density in that area at or below the substrate surface.</p>
申请公布号 EP2545582(A4) 申请公布日期 2014.07.09
申请号 EP20110754183 申请日期 2011.03.11
申请人 SINMAT, INC.;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. 发明人 SINGH, RAJIV, K.;ARJUNAN, ARUL, CHAKKARAVARTHI;SINGH, DEEPIKA
分类号 H01L21/20;C30B25/18;C30B29/36;H01L21/02 主分类号 H01L21/20
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