发明名称 |
ION BEAM DIMENSION CONTROL FOR ION IMPLANTATION PROCESS AND APPARATUS, AND ADVANCED PROCESS CONTROL |
摘要 |
<p>A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.</p> |
申请公布号 |
KR20140088068(A) |
申请公布日期 |
2014.07.09 |
申请号 |
KR20140078185 |
申请日期 |
2014.06.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HWANG CHIH HONG;CHANG CHUN LIN;CHENG NAI HAN;YANG CHI MING;LIN CHIN HSIANG |
分类号 |
H01L21/265;H01J37/317 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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