发明名称 Carrier with three-dimensional capacitor
摘要 A carrier with three-dimensional capacitor includes a substrate and a three-dimensional capacitor, wherein the substrate comprises a trace layer having a first terminal and a second terminal. The three-dimensional capacitor is integrally formed as one piece with the trace layer. The three-dimensional capacitor and the trace layer are made of same material. The three-dimensional capacitor comprises a first capacitance portion and a second capacitance portion, the first capacitance portion comprises a first section, a second section and a first passage, the second capacitance portion is formed at the first passage. The second capacitance portion comprises a third section, a fourth section and a second passage communicated with the first passage. The first capacitance portion is located at the second passage, a first end of the first capacitance portion connects to the first terminal, and a third end of the second capacitance portion connects to the second terminal.
申请公布号 US8772644(B2) 申请公布日期 2014.07.08
申请号 US201213644709 申请日期 2012.10.04
申请人 Chipbond Technology Corporation 发明人 Kuo Chih-Ming;Ho Lung-Hua;Hsu You-Ming
分类号 H05K1/16 主分类号 H05K1/16
代理机构 Jackson IPG PLLC 代理人 Jackson IPG PLLC
主权项 1. A carrier with three-dimensional capacitor at least includes: a substrate having a surface and at least one trace layer formed on the surface, the at least one trace layer comprises at least one first terminal and at least one second terminal; and at least one three-dimensional capacitor integrally formed as one piece with the at least one trace layer, wherein the at least one three-dimensional capacitor and the at least one trace layer are made of a same material, the at least one three-dimensional capacitor comprises a first capacitance portion and a second capacitance portion having a polarity opposite to a polarity of the first capacitance portion, the first capacitance portion comprises a first end, a second end, at least one first section, at least one second section connected to the at least one first section and at least one first passage located between the at least one first section and the at least one second section, the second capacitance portion is formed at the at least one first passage and comprises a third end, a fourth end, at least one third section, at least one fourth section connected to the at least one third section and at least one second passage located between the at least one third section and the at least one fourth section, the at least one second passage is in communication with the at least one first passage, the first capacitance portion is located at the second passage, the first end corresponds to the third end and connects to the at least one first terminal, the third end connects to the at least one second terminal, wherein the at least one first section and the at least one third section are spaced apart from each other to define a first spacing, the at least one third section and the at least one second section are spaced apart from each other to define a second spacing, the at least one fourth section and the at least one second section are spaced apart from each other to define a third spacing.
地址 Hsinchu TW